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Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

Published online by Cambridge University Press:  25 February 2011

A. T. Macrander ,
B. M. Glasgow ,
E. R. Minami ,
R. F. Karlicek ,
D. L. Mitcham ,
V. G. Riggs ,
D. W. Berreman  and
W. D. Johnston Jr
A. T. Macrander
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
B. M. Glasgow
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
E. R. Minami
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. F. Karlicek
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. L. Mitcham
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
V. G. Riggs
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. W. Berreman
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
W. D. Johnston Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Simulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 225
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Saul, R. H., Lee, T. P., and Burrus, C. A., “Light-Emitting-Diode device design”, Chap. 5 in Semiconductors and Semimetals, Vol.22 ed. by Willardson, R. K. and Beer, A. C. (Academic Press, New York, NY).Google Scholar
[2] Macrander, A. T. and Strege, K., “X-ray monitoring of InGaAs layers grown by VPE”, MRS Symp. Proc. 56, 115 (1986).Google Scholar
[3] Macrander, A. T., Minami, E. R., and Berreman, D. W., “Dynamical x-ray rocking curve simulations of nonuniform InGaAs and lnGaAsP using Abeles' matrix method”, J. Appl. Phys. 60, 1364 (1986).Google Scholar
[4] Growth on 2 inch diameter rounds was performed in a reactor designed by Karlicek, R. F. with contributions by W. D. Johnston, Jr. and K. Strege.Google Scholar
[5] Cole, H. and Stemple, N. P., “Effect of crystal perfection and polarity on absorption edges seen in Bragg diffraction”, J. Appl. Phys. 33, 2227 (1962).CrossRefGoogle Scholar
[6] Macrander, A. T. and Strege, K., “X-ray double crystal characterization of highly perfect InGaAs/InP grown by VPE”, J. AppI. Phys. 59, 442 (1986).Google Scholar
[7] Macrander, A. T., Bonner, W. A., and Monberg, E. M., “An evaluation of (100) sulfur doped InP for used as a first crystal in a x-ray double crystal diffractometer”, Materials Lett. 4, 181 (1986).Google Scholar
[8] Nahory, R. E., Pollack, M. A., Johnston, W. D. Jr., and Barns, R. L., “Band gap versus composition and demonstration of Vegard's law for In1−x GayP1−y lattice matched to InP”, Appl. Phys. Lett. 33, 659 (1978).Google Scholar