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Dynamic Simulation of Ultra-Shallow Implantation Profiles in Single-Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

Matthias Posselt
Matthias Posselt*
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, P.O.Box 510119, D-01314 Dresden, Germany.
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Abstract

The binary collision code Crystal-TRIM is applied to simulate 15 keV BF+2 and As+ implantations into channeling and "random" directions, at different doses. The buildup of radiation damage is described by assuming statistical creation of local amorphous regions and formation of amorphous zones if the density and/or size of the local amorphous regions exceeds a critical value. Damage accumulation during ion bombardment causes enhanced dechanneling and, therefore, the alteration of the shape of range and damage profiles. The depth profiles calculated by Crystal-TRIM show a good agreement with experimental data. The thickness of the amorphous layers formed at high doses is also in accordance with measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 227
Copyright
Copyright © Materials Research Society 1995

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References

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