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Dynamic Recovery in Au Ion Irradiated Gallium Nitride

Published online by Cambridge University Press:  01 February 2011

W. Jiang ,
W. J. Weber ,
L. M. Wang  and
K. Sun
W. Jiang
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, Richland, WA 99352
W. J. Weber
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, Richland, WA 99352
L. M. Wang
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, Richland, WA 99352
K. Sun
Affiliation:
Department of Nuclear Engineering & Radiological Sciences, the University of Michigan, Ann Arbor, MI 48109
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Abstract

Gallium nitride single crystals were irradiated using energetic Au2+ ions to two fluences at room temperature. Two different damage levels and depth profiles that are characterized by near-surface damage accumulation and deeper-region damage saturation were produced. Thermal annealing at 873 K resulted in disorder recovery only in the near-surface region at low fluence. However, simultaneous irradiation with 5.4 MeV Si2+ ions during annealing at 873 K induced significant recovery over the entire damage profile at both low and high fluences. Results from high-resolution transmission electron microscopy show recovery of the crystal structure in the highly disordered surface region following the Si2+ ion irradiation. The irradiation-assisted recovery is primarily attributed to defect-stimulated recovery and epitaxial recrystallization processes due to the creation of mobile Frenkel pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R5.5
Copyright
Copyright © Materials Research Society 2004

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References

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