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DX-Center in Se-Doped AlxGa1-xAs

Published online by Cambridge University Press:  25 February 2011

Thomas R. Hanak ,
Assem M. Bakry ,
Richard K. Ahrenkiel  and
Michael L. Timmons
Thomas R. Hanak
Affiliation:
University of Denver, Department of Physics, University Park, Denver, CO 80210
Assem M. Bakry
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Richard K. Ahrenkiel
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Michael L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, NC, 27709-2194
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Abstract

We report the measurement of the thermal activation energy for the DX- center in Se-doped AlxGa1-xAs grown by metal-organic chemical vapor deposition (MOCVD) for different alloy compositions (x=0.19, 0.23, 0.27, 0.31). The peaks obtained from conventional DLTS are often broad or asymmetric with shoulders on one or both sides. These phenomena often arise from two or more traps which are active in the same temperature range.

The capacitive transients are recorded digitally and analyzed directly by applying a nonlinear double exponential fitting routine to the data. This fitting produces two Arrhenius plots and yields the densities of the defect states. From the Arrhenius plots, the capture cross sections at infinite temperature and the thermal activation energies are calculated. These results are then used to simulate the DLTS spectra. Excellent agreement between real and simulated spectra is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 781
Copyright
Copyright © Materials Research Society 1990

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