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Dry Etching and Impurity Diffusion for Integrated Optoelectronics

Published online by Cambridge University Press:  21 February 2011

L. A. Coldren
L. A. Coldren*
Affiliation:
ECE and Materials Departments, Univ. of California, Santa Barbara, CA 93106
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Abstract

In this paper the state-of-the-art in the use of dry etching for the fabrication of optoelectronic devices will be briefly reviewed, and to a lesser extent, the use of impurity-induced-disordering in these same structures will be discussed. In both instances, the author will rely heavily upon results from his own laboratory. This is being done in the interest of saving time and effort, although clearly at the risk of omitting some very important contributions from many others.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 237
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Lee, R.E., J. Vac. Sci. Technol., 16, (1979).Google Scholar
[2] Bouadma, N., Riou, J., Kampfer, A., Elect. Letts. 21, (1985).Google Scholar
[3] Yang, J.J., Sergant, M., Jansen, M., Ou, S.S., Eaton, L. and Simmons, W.W., Appl. Phys. Lett. 49 (18) (1986).Google Scholar
[4] Coldren, L.A., Patent No. 4285763, (8 August 1981).Google Scholar
[5] Hu, E.L. and Howard, R.E., Patent No. 4326911, (27 April 1982).Google Scholar
[6] Howard, R.E., Hu, E.L. and Coldren, L.A., Topical Mtng. on Int. and Guided-Wave Optics Digest, paper WA-2, (1980).Google Scholar
[7] Ryan, F.J., Chang, M.F., Vahrenkamp, R.P., Williams, D.A., Fleming, W.P. and Kirkpatrick, C.G., Technical Digest, GaAs IC Symposium, 45, (1985).Google Scholar
[8] Coldren, L.A., Iga, K., Miler, G.I. and Rentschler, J.A., Appl. Phys. Letts., 37 (8) (1980).CrossRefGoogle Scholar
[9] Coldren, L.A., Miller, B.I., Iga, K. and Rentschler, J.A., Appl. Phys. Letts., 32, (1981).Google Scholar
[10] Bosch, M.A., Coldren, L.A. and Good, E., Appl. Phys. Letts., 38, (1981).CrossRefGoogle Scholar
[11] Boyd, G.D., Coldren, L.A. and Storz, F.G., Appl. Phys. Letts., 36, (7) (1980).Google Scholar
[12] Asakawa, K. and Sugata, S., Jap. Journ. Appl. Phys. 22, (1983).Google Scholar
[13] Geis, M.W., Lincoln, G.A., Efremow, N.N. and Piacentini, W.J., J. Vac. Sci. Technol, 12, (1981).Google Scholar
[14] Geis, M.W., Efremow, N.N. and Lincoln, G.A., J. Vac. Sci. Technol, B, 4. (1986).CrossRefGoogle Scholar
[15] Sugata, S. and Asakawa, K., J. Vac. Sci. Technol. B, 5, (1987).Google Scholar
[16] Skidmore, J.A., Coldren, L.A., Merz, J.L. and Hu, E.L., The 32nd International Symposium on Electron, Ion and Photon Beams, (1988).Google Scholar
[17] Laidig, W.D., Holonyak, N. Jr., Camras, M.D., Hess, K., Coleman, J.J., Dapkus, P.D. and Bardeen, J., Appl. Phys. Letts., 38, (1981).Google Scholar
[18] Omura, E., Vawter, G.A., Coldren, L.A. and Merz, J.L., Electron. Letts., 22, (1986).Google Scholar
[19] Omura, E., Wu, X.S., Vawter, G.A., Coldren, L.A., Hu, E.L. and Merz, J.L., Electron. Letts., 22, (1986).Google Scholar
[20] Thornton, R., Burnham, R., Paoli, T., Holonyak, N., Deppe, D., Appl. Phys. Letts., 41 (12), (1985).Google Scholar
[21] Thornton, R.L., Burnham, R.D., Paoli, T.L., Holonyak, N., Jr. and Deppe, D.G., Appl. Phys. Letts., 42, (1986).Google Scholar
[22] Julien, F., Swanson, P.D., Emanuel, M.A., Deppe, D.G., DeTemple, T.A., Coleman, J.J. and Holonyak, N. Jr., Appl. Phys. Letts., 50, (1987).Google Scholar
[23] Hausken, T.R., Huang, T.C., Lee, K.W., Simes, R.J., Dagli, N. and Coldren, L.A., Integrated & Guided Wave Optics Topical Mtng, paper MA3, (1988).Google Scholar