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Dry ETCH Induced Defects and H Passivation of GaAs Surfaces Produced by CH4/H2/Ar Plasmas

Published online by Cambridge University Press:  22 February 2011

G. F. McLane  and
W.R. Buchwald
G. F. McLane
Affiliation:
Army Research Laboratory, Ft. Monmouth, NJ 07703
W.R. Buchwald
Affiliation:
Army Research Laboratory, Ft. Monmouth, NJ 07703
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Abstract

An investigation was performed of surface region etch-induced damage of GaAs magnetron reactive ion etched in CH4/H2/Ar gas mixtures for 10% and 20% Ar concentrations. Schottky barrier I-V measurements showed that changes in surface potential (ϕb) upon etching and subsequent annealing can be explained by a combination of H passivation effects and As removal from the surface region. Changes in Schottky barrier ideality factor (n) can be explained by the presence of etch-induced surface region defects such as donor-like As vacancies and deep level recombination centers, both of which are passivated by H. Schottky barrier C-V measurements indicated that H passivation extends about 0.3 μm below the surface. Rapid thermal annealing at 400°C for 30 s was effective in removing most of the H passivation effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 221
Copyright
Copyright © Materials Research Society 1994

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References

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