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Dry and Wet Etching for Group III – Nitrides

Published online by Cambridge University Press:  10 February 2011

I. Adesida ,
C. Youtsey ,
A. T. Ping ,
F. Khan ,
L. T. Romano  and
G. Bulman
I. Adesida
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
C. Youtsey
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
A. T. Ping
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
F. Khan
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801
L. T. Romano
Affiliation:
Xerox PARC, Palo Alto, CA 94304
G. Bulman
Affiliation:
CREE Research, Inc., Durham, NC 27713
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Abstract

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G1.4
Copyright
Copyright © Materials Research Society 1999

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