Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-16T08:58:56.162Z Has data issue: false hasContentIssue false
  • English
  • Français

Downstream Etching of GaAs and InP Using Molecular Chlorine and Chlorine Radicals

Published online by Cambridge University Press:  21 February 2011

David G. Lishan  and
Evelyn L. Hu
David G. Lishan
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Evelyn L. Hu
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
Get access

Abstract

The temperature dependent etching of GaAs and InP using both molecular and remote plasma activated Cl2 and HC1 is examined. GaAs etches nearly three times faster in a remotely generated C12 plasma than in a molecular Cl2 environment with plasma off. The temperature dependance from room temperature to 250°C is similar for both cases. Significant etch rates of GaAs are observed for HC1 remotely generated plasma even at room temperature (∼1000 Å/min). Although the etch rate for InP below 150°C is quite low for either C12 or HCl, the relatively fast, temperature independent etch rate above this temperature is comparable to that of GaAs. The results are compared to RIE and a thermodynamic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 407
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wong, H.-F., Green, D.L., Liu, T.Y., Lishan, D.G., Bellis, M., Hu, E.L., Petroff, P.M., Holtz, P.O., Merz, J.L., J. Vac. Sci. Technol. B6, 1906 (1988).Google Scholar
[2] Cheung, R., Thoms, S., McIntyre, I., Wilkinson, C.D.W., Beaumont, S.P., J. Vac. Sci. Technol. B6, 1911 (1988).Google Scholar
[3] Gamo, K., Miyake, H., Yuba, Y., Namba, S., Kasahara, H., Sawaragi, H., Aihara, R., J. Vac. Sci. Technol. B6, 2124 (1988).Google Scholar
[4] Miyamoto, H., Furuhata, N., Hoshino, H., Okamoto, A., Ohata, K., Gallium Arsenide and Related Compunds 1988. (Instit. of Phys. Conf. Series 96, 1988), pp. 47.Google Scholar
[5] Sugata, S., Asakawa, K., Jap. Journ. Appl. Phys. 23, L564 (1984).Google Scholar
[6] Asakawa, K., (private communication).Google Scholar
[7] Donnelly, V.M., Flamm, D.L., Tu, C.W., and Ibbotson, D.E., J. Electrochem Soc. 129, 2533 (1982).Google Scholar
[8] Balooch, M., Olander, D.R., and Siekhaus, W.J., J. Vac. Sci. Technol. B4, 794 (1986).Google Scholar
[9] McNevin, S.C., J. Vac. Sci. Technol. B4, 1216 (1986).Google Scholar
[10] Contour, J.P., Massies, J., Saletes, A., Outrequin, M., Simondet, F., Rochette, J.F., J. Vac. Sci. Technol. B5, 730 (1987).Google Scholar
[11] Hu, E.L., Howard, R.E., Appl. Phys. Lett. 37, 1022 (1980).Google Scholar