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Downstream Etching of GaAs and InP Using Molecular Chlorine and Chlorine Radicals

  • David G. Lishan (a1) and Evelyn L. Hu (a1)

Abstract

The temperature dependent etching of GaAs and InP using both molecular and remote plasma activated Cl2 and HC1 is examined. GaAs etches nearly three times faster in a remotely generated C12 plasma than in a molecular Cl2 environment with plasma off. The temperature dependance from room temperature to 250°C is similar for both cases. Significant etch rates of GaAs are observed for HC1 remotely generated plasma even at room temperature (∼1000 Å/min). Although the etch rate for InP below 150°C is quite low for either C12 or HCl, the relatively fast, temperature independent etch rate above this temperature is comparable to that of GaAs. The results are compared to RIE and a thermodynamic model.

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Downstream Etching of GaAs and InP Using Molecular Chlorine and Chlorine Radicals

  • David G. Lishan (a1) and Evelyn L. Hu (a1)

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