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Double-Gated Singly-Addressable Polysilicon Tip Array Fabrication and Characterization

  • N.N. Chubun (a1), A.G. Chakhovskoi (a1), M. Hajra (a1) and C.E. Hunt (a1)

Abstract

Polysilicon-on-insulator singly-addressable arrays, consisting of double-gated field emission cells, were fabricated and tested. The field-emission tips were formed by a subtractive technique, using 2.5 µm thick polysilicon stripes on an insulating substrate. The tip structure was oxidized for dielectric isolation and coated with a 0.4 µm polysilicon layer as a first gate electrode. The polysilicon layer was then subsequently oxidized to provide a second isolation layer for separation from a 0.1 µm gold film, deposited as a second gate electrode. Finally, the 1.5 µm aperture was formed, combining wet etching of the silicon dioxide and dry etching of the polysilicon layers. The matrix allows addressing electrically any emission cell at the intersection of a cathode column and an extracting gate line. An independent voltage can be applied to the second gate during operation to focus the electron beam of an operating tip.

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1. Fraser, D.L., Miniature directed electron beam source, U.S. Patent 3,753,022.
2. Golenitsky, I.I.; Sazonov, V.P.; Chubun, N.N.; Rumyantsev, S.A. Electron gun with field-emission array cathodes for vacuum microwave devices. JVST B, vol.13, no.2, March-April 1995. pp. 589–92.
3. Kesling, W.D. and Hunt, C.E., Beam Focusing for Field-Emission Flat-Panel Displays, IEEE Trans. Electron Devices, 42 (2), pp. 340347, 1995.
4. Tang, C.M., Swyden, T.A., and Ting, A.C., Planar lenses for field-emitter arrays, JVST B, 13(2), pp. 571575, 1995.
5. Tang, C.M., Swyden, T.A., and Thomason, K.A. et al. Emission measurements and simulation of silicon field emitter arrays with linear planar lenses, JVST B, 14(6), pp. 34553459, 1996.
6. Yokoo, K., Arai, M., Mori, M., Bae, J., and Ono, S., Active Control of the Emission Current of Field Emitter Arrays, JVST B, 13, pp. 491493,1995.
7. Tohma, Y., Kanemaru, S. and Itoh, J., Electron-beam characteristics of double-gated Si field emitter arrays, JVST B, 14(3), pp. 19021905, 1996.
8. Itoh, J., Tohma, Y., Kanemaru, S. and Shimizu, K., Fabrication of Double-gated Si Field Emitter Arrays for Focused Electron Beam Generation, JVST B, 13, pp. 19681972, 1995.
9. Yamaoka, Y., Kanemaru, S. and Itoh, J., Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens, Jpn.J.Appl.Phys part 1, No.12B, Vol. 35, pp. 66266628, 1996.
10. Kesling, W.D. and Hunt, C.E., Field Emission Device Modeling For Application to Flat Panel Displays, JVST B, 11, pp. 518, 1993.
11. Lee, J.H., Song, Y.H., Kang, S.Y., Kim, S.G., Cho, K.I., and Yoo, H.J., Fabrication and Characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process, JVST, B 16 (2), pp.811814, 1998.
12. Chubun, N.N., Chakhovskoi, A.G., Hunt, C.E. and MHajra, . Fabrication and characterization of singly-addressable arrays of polysilicon field-emission cathodes, Solid State Electronics (accepted for publication, 2001).

Double-Gated Singly-Addressable Polysilicon Tip Array Fabrication and Characterization

  • N.N. Chubun (a1), A.G. Chakhovskoi (a1), M. Hajra (a1) and C.E. Hunt (a1)

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