Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-18T00:24:08.494Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Effects on CdO Thin Films

Published online by Cambridge University Press:  21 March 2011

X. Li ,
T. Barnes ,
C. DeHart ,
D. King ,
S. Asher ,
M. Young ,
T.A. Gessert  and
T.J. Coutts
X. Li
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
T. Barnes
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
C. DeHart
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
D. King
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
S. Asher
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
M. Young
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
T.A. Gessert
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
T.J. Coutts
Affiliation:
National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, CO 80401
Get access

Abstract

This paper reports the properties of undoped CdO films and CdO films doped with the group VII element F and the group IV element Sn. The CdO films are made by low-pressure chemical-vapor deposition. We observe that undoped CdO films can achieve a carrier concentration of 1021 cm−3, apparently by controlling the intrinsic defect. However, the electron mobility of these films is only around 2 cm2 V−1 s−1. With fluorine doping, an electron mobility of ∼260 cm2 V−1 s−1 has been achieved. However, low carrier concentration results because of the low solubility of F in CdO film. CdO films doped with both Sn and F demonstrate carrier concentrations of 1021 cm−3 and reasonable electron mobilities of around 20 cm2 V−1 s−1. Due to the small effective electron mass of CdO, a large Burstein-Moss shift is observed for films with high carrier concentration. The shift enables the fundamental absorption edges of undoped CdO films to reach 3.0 eV and 3.3 eV for films doped with both Sn and F.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.18
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stuke, J., Z. Phys. 137, 401 (1954).Google Scholar
2. Wright, R.W. and Bastin, J.A., Proc. Phys. Soc. 71, 109 (1958).Google Scholar
3. Burstein, E., Phys. Rev. 93, 632 (1954).Google Scholar
4. Coutts, T.J., Young, D. L., and Li, X., MRS Bulletin 25, 58 (2000).Google Scholar
5. Coutts, T.J., Wu, X., Mulligan, W.P., and Webb, J.M., Journal of Electronic Materials 25, 935 (1996).Google Scholar
6. Li, X., Yan, Y., Mason, A., Gessert, T.A., and Coutts, T.J., to be published in Electrochemical and Solid State Letters.Google Scholar
7. Pankove, Jacques I., Optical Processes in Semiconductors, p36 (Dover Publications Inc, New York, 1975).Google Scholar
8. Koffyberg, F. P., Journal of Solid State Chemistry 2, 176–181 (1970).Google Scholar
9. Tanaka, K., Kunioka, A., and Sakai, Y., Jap. J. Appl. Phys. 8, 681 (1969).Google Scholar
10. Barnes, T.M., Li, X., DeHart, C., Moutinho, H., Asher, S., Yan, Y., and Gessert, T.A. to be published in this proceeding.Google Scholar
11. Zhao, Z., Komin, V., Viswanathan, V., Morel, D.L., and Ferekides, C.S., to be published in 28th IEEE, PVSC (2000).Google Scholar