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Doped Yttrium Iron Garnet (Yig) Thin Films For Integrated Magneto-Optical Applications

Published online by Cambridge University Press:  10 February 2011

Bethanie J.H. Stadler ,
Yi-Qun Li ,
Mondher Cherif ,
Kenneth Vaccaro  and
Joseph P. Lorenzo
Bethanie J.H. Stadler
Affiliation:
NZ Applied Technologies Corp, Woburn, MA 01810
Yi-Qun Li
Affiliation:
USAF Rome Laboratory, Hanscom AFB, MA 01731
Mondher Cherif
Affiliation:
USAF Rome Laboratory, Hanscom AFB, MA 01731
Kenneth Vaccaro
Affiliation:
NZ Applied Technologies Corp, Woburn, MA 01810
Joseph P. Lorenzo
Affiliation:
NZ Applied Technologies Corp, Woburn, MA 01810
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Abstract

A novel single-source MOCVD technique was used to deposit Ce:YIG ((Ce,Y)3Fe5O12) films which were investigated for integrated magneto-optical applications, such as waveguide isolators. These films were grown on gadolinium gallium garnet substrates in order to optimize the growth conditions before growth on semiconductor substrates was attempted. We were able to achieve very high ratios of Ce:Y (= 0.4) due to the nonequilibrium nature of MOCVD. Ce:YIG films on GGG substrates were epitaxial with excellent optical and magnetic properties, along with high Faraday rotations that were comparable to commercial Bi:YIG. Planar waveguiding was observed in Ce:YIG films on both GGG and MgO substrates. MgO also proved to be a successful buffer layer for protecting the semiconductor substrates during YIG deposition. The Ce:YIG films on MgO-buffered GaAs had very promising magnetic properties, but the MgO deposition on InP must be optimized before successful Ce:YIG films on InP can be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 389
Copyright
Copyright © Materials Research Society 1997

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References

1 Manifacier, J., Gasiot, J., Fillard, J., Journal of Physics E, 9 1002 (1976).Google Scholar
2 Stadler, B., Vaccaro, K., Davis, A., Dauplaise, H., Ramseyer, G., Martin, E., Theodore, L., and Lorenzo, J., Journal of Electronic Materials 25 709 (1996).Google Scholar
3 Okamura, Y. and Yamamoto, S., Journal of Applied Physics 69 4583 (1991).Google Scholar
4 FDK Corporation's 1996 Catalog.Google Scholar