Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-25T13:57:36.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Doped Channel MBE GaAs Field Effect Transistor (MEDFET) with Laser Processed Ohmic Contacts

Published online by Cambridge University Press:  26 February 2011

G. Halkias ,
Z. Hatzopoulos  and
A. Christou
G. Halkias
Affiliation:
Research Center of Crete/Foundation for Research and Technology-Hellas, Heraklio, Crete, Greece
Z. Hatzopoulos
Affiliation:
Research Center of Crete/Foundation for Research and Technology-Hellas, Heraklio, Crete, Greece
A. Christou
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
Get access

Abstract

A doped channel heterojunction Field Effect Transistor (Metal-Doped Channel Field Effect Transistor, MEDFET) was fabricated using a molecular beam epitaxially (MBE) grown structure and excimer laser processed TiW-silicide ohmic contacts and TIW-Si gate metallization. The device was characterized at X-band frequencies in order to investigate the potential benefits of the semiconductor MBE structure and the potential stability of the laser processed TiW/Si electrode metallizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 647
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ghosh, C.L., Layman, R.L., IEEE Elec. Dev. Lett., EDL–5, P.3 (1984).CrossRefGoogle Scholar
[2] Arnold, D. et al., IEEE Elec. Dev. Lett., EDL–5, P.82 (1984).CrossRefGoogle Scholar
[3] Kim, B., Wurtele, M., Shih, H.D., Tserng, H.Q., Elec. Lett., Vol.23, No 19, p. 1008 (1987).CrossRefGoogle Scholar
[4] Schaff, W.J., Eastman, L.F., J. Vac. Scie. and Techn. B, 2, P. 265 (1984).CrossRefGoogle Scholar
[5] Shur, M.S., Abrokwah, J.K., Danieis, R.R. and Arch, D.E., J. Appl. Phys. 61 (4), 1643 (1987).CrossRefGoogle Scholar
[6] Papanicolaou, N.A., Anderson, W.T., Christou, A., Inst. Phys. Conf. Ser. No. 65, Ch. 5, P. 407 (1982).Google Scholar
[7] Anderson, W.T., Christou, A., Davey, J.E., Thin Solid Films, 104 (1983) 57–67.CrossRefGoogle Scholar
[8] Morgan, D.V., Thomas, H., Anderson, W.T., Thompson, P., Christou, A., Diskett, D.J., Electron. Lett. Vol.23, p. 1154 (1987).CrossRefGoogle Scholar
[9] Cook, R. and Frey, J., IEEE Trans. Elec. Dev., ED–29, No. 6, p. 970 (1982).CrossRefGoogle Scholar