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Dopants in LiNbO3: Lattice Site Location, Ion Implantation and Epitaxial Regrowth

Published online by Cambridge University Press:  15 February 2011

L. Rebouta ,
J. C. Soares ,
M. F. Da Silva ,
J. A. Sanz-Garcia ,
E. Dieguez  and
F. Agullo-Lopez
L. Rebouta
Affiliation:
Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, 2 1699, Lisboa Codex, Portugal
J. C. Soares
Affiliation:
Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, 2 1699, Lisboa Codex, Portugal
M. F. Da Silva
Affiliation:
Departamento de Física, Instituto de Ciências e Engenharia Nucleares, LNETI, 2685 Sacavém, Portugal
J. A. Sanz-Garcia
Affiliation:
Departamento de Física Aplicada, C-IV, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid, Spain
E. Dieguez
Affiliation:
Departamento de Física Aplicada, C-IV, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid, Spain
F. Agullo-Lopez
Affiliation:
Departamento de Física Aplicada, C-IV, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid, Spain
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Abstract

Ion-beam/channeling data for the lattice location of Ti, Hf, Er and Nd in LiNbO3 and LiNbO3: Mg are presented. These impurities are relevant in relation to waveguide and integrated optics devices. It is shown that co-doping with Mg markedly influences the lattice location observed in LiNbO3. The amorphization and recrystalization process following Hf implantation and annealing are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 311
Copyright
Copyright © Materials Research Society 1992

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References

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