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Dopant-Defect Interactions in II-VI Semiconductors Studied by PAC

Published online by Cambridge University Press:  26 February 2011

Thomas Wichert
Thomas Wichert*
Affiliation:
Technische Physik, Universität des Saarlandes, 66041 Saarbrücken, Germany
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Abstract

The application of the perturbed γγ angular correlation technique (PAC) as an analytical tool for the characterisation of atomic defect configurations is discussed, using recent results on donor-acceptor pairs, which were observed in CdTe and other II-VI semiconductors by the radioactive donor 111In. For bulk CdTe crystals and MOCVD grown CdTe films, the role of the cation vacancy, group I and group V elements is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 237
Copyright
Copyright © Materials Research Society 1995

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