Skip to main content Accessibility help
×
Home

Dopant Activation And Epitaxial Regrowth in P-Implanted Pseudomorphic Ge0.12Si0.88 Layers on Si (100)

  • D. Y. C. Lie (a1), T. K. Cams (a2), N. D. Theodore (a3), F. Eisen (a1), M.-A. Nicolet (a1) and K. L. Wang (a2)...

Abstract

A pseudomorphic Ge0.12Si0.88 film 265 nm thick grown on a Si (100) substrate by molecular beam epitaxy was implanted at room temperature with a dose of 1.5 × 1015 cm2 of 100 keV P ions. The projected range of the ions is about 125 nm, which is well within the film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by the implantation. Both implanted and non-implanted samples were subsequently annealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electron Hall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured after annealing. The solid phase epitaxial regrowth is complete at 550 °C, where the implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystalline quality to that of the virgin sample and is relaxed, but the non-implanted portion of the film remains pseudomorphic at 550 °C. When annealed at 800 °C, the strain in the whole epilayer relaxes. The sheet electron mobility values measured at room temperature in the regrown samples (Tann ≥ 550 °C) are about 20% less than those of pure Si.

Copyright

References

Hide All
1. Hong, Q. Z., Zhu, J. G., Mayer, J. W., Xia, W. and Lau, S. S., J. Appl. Phys. 71, 1768 (1992)
2. Paine, D. C., Howard, D. J., Stoffel, N. G., and Horton, J. H., J. Mater. Res. 5, 1023 (1990)
3. Bai, G. and Nicolet, M.-A., J. Appl. Phys. 71, 4227 (1992)
4. Manu, S., Holländer, B., Jäger, W., Kabius, B., Jorke, H. J., and Kasper, E., Nucl. Instr. Mcth. B 39, 405 (1989)
5. Lee, C., Haynes, T. E., Jones, K. S., Appl. Phys. Lett. 62, 501 (1993)
6. Chilton, B. T., Robinson, B. J., Thompson, D. A., Jackman, T. E., and Baribeau, J.-M., Appl. Phys. Lett. 54, 2 (1989)
7. Pai, C. S., Lau, S.S., Suni, I., and Csepregi, L., Appl. Phys. Lett. 47, 1214 (1985)
8. Hong, Stella Q., Hong, Q. Z., and Mayer, J. W., Appl. Phys. Lett. 63, 2053 (1993)
9. Atzmon, Z., Eisenberg, M., Revesz, P., Mayer, J. W., Hong, S. Q., and Schäffer, F., Appl. Phys. Lett. 60, 2243 (1992)
10. Atzmon, Z., Eisenberg, M., Shacham-Diamand, Y., Mayer, J. W. and Schäffer, F., Appl. Phys. Lett. 61, 2902 (1992)
11. Hong, Stella Q., Hong, Q. Z., and Mayer, J. W., J. Appl. Phys. 72, 3821 (1993)
12. Ziegler, J. F., Bicrsack, J. P. and Littmark, U., The Stopping and Range of ions in Matter, (Pergamon Press, London, 1985)
13. Lie, D. Y. C., Vantomme, A., Eisen, F., Nicolet, M.-A., Cams, T. K. and Wang, K. L., J. of Appl. Phys. 74, 6039 (1993)
14. Lie, D. Y. C., Vantomme, A., Eisen, F., Nicolet, M.-A., Arbet-Engels, V., and Wang, K. L., Mater. Res. Soc. Symp. Proc. 262, 1079 (1993)
15. Crowder, B. L. and Morehead, F. F. Jr Appl. Phys. Lett, 14, 313 (1969)
16. Maszara, W. P. and Rozgonyi, G. A., J. Appl. Phys. 60, 2310 (1986)
17. Gyulai, J. in Ion IMplantation - Science and Technology, edited by Ziegler, J. F., (Academic Press, Orlando, 1984), pp 139210.
18. Mayer, J. W., Eriksson, L. and Davis, J. A., Ion Implantation in Semiconductors - Silicon and Germanium, (Academic Press, New York), pp 200208.
19. Masetti, G., Severi, M. and Solmi, S., IEEE, Trans. Electron Devices, 30, 764 (1983)
20. Fisful, Heavily Doped Semicondcutors, (Plenum Press, New York, 1969), p 133.
21. Manku, T. and Nathan, A., IEEE Trans. Electron Dev., 39, 2082 (1992)

Dopant Activation And Epitaxial Regrowth in P-Implanted Pseudomorphic Ge0.12Si0.88 Layers on Si (100)

  • D. Y. C. Lie (a1), T. K. Cams (a2), N. D. Theodore (a3), F. Eisen (a1), M.-A. Nicolet (a1) and K. L. Wang (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed