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Donor Reactivation Kinetics and Hydrogen Redistribution in the Space Charge Layer of N-Type Silicon

Published online by Cambridge University Press:  03 September 2012

Y. -A. Wu ,
G. Roos ,
N. M. Johnson  and
C. Herring
Y. -A. Wu
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 Department of Applied Physics, Stanford University, Stanford, CA 94305
G. Roos
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. Herring
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 Department of Applied Physics, Stanford University, Stanford, CA 94305
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Abstract

The passivation and reactivation of As donor dopants in n-type Si was studied with both monatomic hydrogen and deuterium. Hydrogenated Schottky diodes were characterized with C-V and DLTS measurements. The reactivation kinetics of the As-H and As-D complexes were studied in the space-charge layer of reverse biased diodes in the temperature range from 60°C to 120°C. These bias-anneals yield dissociation time constants for As-H, from which an averaged activation energy of 1.17±0.1 eV was determined. Although the dissociation of the As-H complex is appreciably slower than that previously measured for P-H, the activation energy is within about 0.05 eV of that determined previously for the P-H complex (1.2 eV). The depth redistribution of the As-H complexes after bias-annealing agrees with the previous conclusion that hydrogen can assume a negative charge state in n-type Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 449
Copyright
Copyright © Materials Research Society 1992

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References

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