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Dominant Factor of Squareness in P-E Hsyteresis Loops of MOCVD-PZT Films

Published online by Cambridge University Press:  26 February 2011

Hiroshi Funakubo ,
Akihiro Sumi ,
Hitoshi Morioka ,
Shoji Okamoto  and
Shintaro Yokoyama
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, midori-ku, Yokohama, Kanagawa, 226-8502, Japan
Akihiro Sumi
Affiliation:
sumi@iem.titech.ac.jp, Japan
Hitoshi Morioka
Affiliation:
morioka@iem.titech.ac.jp, Japan
Shoji Okamoto
Affiliation:
okamoto@iem.titech.ac.jp, Japan
Shintaro Yokoyama
Affiliation:
yokoyama@iem.titech.ac.jp, Japan
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Abstract

The effects of P-E properties of epitaxially grown rhombohedral Pb(Zr,Ti)O3 film on the film thickness and temperature were systematically investigated. (100)-oriented rhombohedral Pb(Zr0.65Ti0.35)O3 films with 50 - 3200 nm in thickness were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The ratio of the remanent polarization (Pr) to saturation polarization (Psat), the Pr/Psat ratio, at room temperature decreased with decreasing the film thickness. Moreover, the Pr/Psat ratio at 10 K of 180-nm-thick films was smaller than that of 3200-nm-thick film and dropped at lower temperature with increasing the film thickness. These results suggest that the small Pr/Psat ratio of thin film at room temperature is originated to both of small Pr/Psat ratio even at 10K and their drop starting at lower temperature when the temperature increased.

Keywords

ferroelectricchemical vapor deposition (CVD) (deposition)electrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T04-04
Copyright
Copyright © Materials Research Society 2006

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