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Domain Imaging, Polarization Hysteresis, and Switching in Nano-Size Ferroelectric Structures

Published online by Cambridge University Press:  10 February 2011

C. Harnagea ,
A. Pignolet ,
M. Alexe ,
D. Hesse  and
U. Gösele
C. Harnagea
Affiliation:
e-mail:charna@mpi-halle.de
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
M. Alexe
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
U. Gösele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany
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Abstract

A fundamental issue in the physics of ferroelectric memories and piezoelectric devices is to study how their properties scale with the size of the ferroelectric structure. In this work we present results concerning the ferroelectric behavior of structures with lateral sizes in the range 100 nm to 1 μm. The ferroelectric characterization was achieved using the piezoresponse mode of a scanning force microscope. 100 nm patterned PZT polycrystalline structures as well as 200 nm epitaxial SrBi2Ta2O9 grains exhibit distinct ferroelectric hysteresis loops. Fatigue measurements on 500 nm structures of PZT were also performed and are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 351
Copyright
Copyright © Materials Research Society 2000

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