Cr containing deposits were formed by focussing a chopped (2000Hz) 325nm CW He-Cd laser on the inner surface of the quartz window of a cell containing 110-150 mTorr of Cr(C0)6 precursor. The deposit thickness and the chemical identity of contaminants were determined by stylus profilometry and attenuated total reflectance IR spectrometry. In certain regimes of incident laser power density, deposits exhibit a dual morphology, with a narrow inner deposit up to several microns in thickness on top of a wider deposit less than 0.16 microns in thickness. Changes in the morphology with incident power density and changes in transmitted and reflected light during the deposition enables assignment to photothermal and photochemical mechanisms. A deposition rate for each mechanism and an optical attenuation coefficient for the photochemical deposit at 325nm were determined from the deposit thicknesses as a function of time.