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Disptacement of Arsenic from Substitutional Sites in Silicon by MEV HE+ Irradiation

Published online by Cambridge University Press:  25 February 2011

E A Maydell-Ondrusz ,
I H Wilson  and
K G Stephens
E A Maydell-Ondrusz
Affiliation:
Department of Electronic & Electrical EngineeringUniversity of Surrey, Guildford, Surrey, England
I H Wilson
Affiliation:
Department of Electronic & Electrical EngineeringUniversity of Surrey, Guildford, Surrey, England
K G Stephens
Affiliation:
Department of Electronic & Electrical EngineeringUniversity of Surrey, Guildford, Surrey, England
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Abstract

Cross-sections were determined for displacement of arsenic from substitutional sites in silicon by 1.5MeV He+ ions. Results are presented for channelled and random incidence on (111) and (100) silicon, doped by arsenic implantation and annealed by scanning electron beam irradiation. Layers doped during MBE growth were also studied for comparison.

Inner L-shell ionisation of host atoms is proposed to explain the observed displacement cross-section and its variation with arsenic concentration. The results are used to indicate the limits for using Rutherford backscattering and channelling techniques to measure the substitutionality of dopants in single crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 123
Copyright
Copyright © Materials Research Society 1985

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References

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