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Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

  • Z. Jamal (a1) and P. J. Goodhew (a1)


Carbon doping of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at levels of up to 1020 cm−3, has been studied by SIMS and by TEM. In the latter case the destruction of short period GaAs-Al.3Ga.7As superlattices was monitored in order to assess the extent of diffusion after annealing at 800°C. The results confirm that C is quite a stable dopant. In addition, the destruction of the superlattices indicates that the diffusion mechanism of C involves group III sublattice sites.



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Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

  • Z. Jamal (a1) and P. J. Goodhew (a1)


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