Dislocations present at GaAs/Si interfaces have been characterized using transmission electron microscopy in plan-view. The GaAs was grown by molecular-beam epitaxy on Si (001) substrate tilted* towards the  direction. The dislocation network at the interface consists primarily of orthogonal edge dislocations with Burgers vectors of a/2 and a/2. However, displacements of these dislocation lines at the interface are observed. These displacements can be attributed to the interaction of 60* dislocations with the network of orthogonal edge dislocations. The density of these 60* dislocations along  direction is different from that along  direction.