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Dislocations and Plasticity in Silicon Crystals by 3-D Mesoscopic Simulations

  • L.P. Kubin (a1), A. Moulin (a1) and P. Pirouz (a2)

Abstract

Several problems related to the dynamics of dislocation sources and the plasticity of silicon crystals are investigated with the help of a mesoscopic simulation. The questions successively examined are the dynamics of a source of perfect dislocations and the conditions under which perfect or partial dislocations are emitted by a source. This leads to a discussion of the initial steps of the model proposed by Pirouz for mechanical twinning and, further, to the suggestion that a relation may exist between several transitions experimentally observed at low temperatures in elemental or compound semi-conductors: a change in the slope of the yield stress vs. temperature curves, a brittle-to-ductile transition and a change in the nature of the mobile dislocations. Finally, simulations are presented of the yield point phenomenon that is a well-known feature of Si and Ge crystals. The results are discussed in terms of evolutionary laws for the total dislocation density during straining.

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  • EISSN: 1946-4274
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