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Dislocations and Plasticity in Silicon Crystals by 3-D Mesoscopic Simulations

Published online by Cambridge University Press:  10 February 2011

L.P. Kubin ,
A. Moulin  and
P. Pirouz
L.P. Kubin
Affiliation:
LEM, CNRS-ONERA, 92322 F-Châtillon Cedex, kubin@onera.fr, amoulin@zig.onera.fr
A. Moulin
Affiliation:
LEM, CNRS-ONERA, 92322 F-Châtillon Cedex, kubin@onera.fr, amoulin@zig.onera.fr
P. Pirouz
Affiliation:
Dept. MSE, CWRU, Cleveland, OH 44106-7204, USA, pirouz@cwmsd.mse.cwru.edu
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Abstract

Several problems related to the dynamics of dislocation sources and the plasticity of silicon crystals are investigated with the help of a mesoscopic simulation. The questions successively examined are the dynamics of a source of perfect dislocations and the conditions under which perfect or partial dislocations are emitted by a source. This leads to a discussion of the initial steps of the model proposed by Pirouz for mechanical twinning and, further, to the suggestion that a relation may exist between several transitions experimentally observed at low temperatures in elemental or compound semi-conductors: a change in the slope of the yield stress vs. temperature curves, a brittle-to-ductile transition and a change in the nature of the mobile dislocations. Finally, simulations are presented of the yield point phenomenon that is a well-known feature of Si and Ge crystals. The results are discussed in terms of evolutionary laws for the total dislocation density during straining.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 3
Copyright
Copyright © Materials Research Society 1999

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