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Dislocations and Bubbles in BF+2 Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

G. E. Pike ,
M. J. Carr ,
W. K. Schubert ,
C. R. Hills ,
G. C. Nelson  and
P. J. Mcwhorter
G. E. Pike
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
M. J. Carr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
W. K. Schubert
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
C. R. Hills
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
G. C. Nelson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
P. J. Mcwhorter
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

Defects in crystalline silicon caused by a BF+2 ion implantation dose of 3x1015cm-2 have been studied using plan-view and cross-section TEM and SIMS. Dislocations form at annealing temperatures above 1000ºC and are pinned below the Si surface by fluorine bubbles ∼10 nm diameter at a density of ∼1011cm-2. This microstructure is essentially stable at 1150ºC from 4 to 400 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 227
Copyright
Copyright © Materials Research Society 1989

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