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Direct Nucleation and Selective Growth of Nuclei for High Crystallinity Poly-Sige Thin Films on Sio2 Substrates

Published online by Cambridge University Press:  10 February 2011

Jun-ichi Hanna ,
Kunihiro Shiota  and
Masaji Yamamoto
Jun-ichi Hanna
Affiliation:
Imaging Science & Engineering Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan, hanna@isl.titech.ac.jp
Kunihiro Shiota
Affiliation:
Electronic Component Division, NEC Corporation, Kawasaki 221, Japan
Masaji Yamamoto
Affiliation:
Imaging Science & Engineering Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
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Abstract

We have proposed a new technique for high crystallinity polycrystalline SiGe thin films with homogeneous crystallinity. The key technologies, i.e., direct nuclei formation on the substrate surface and selective growth of the resulting nuclei to gains, were established irrespective of film composition in a reactive thermal CVD with GeF4 and Si2H6. High crystallinity poly-Si0.05Ge0.95 thin films could be obtained on SiO2 substrates at 375°C and poly-Si0.95Ge0.05 thin films at 450°C by simply tuning the growth pressure for selective growth of the nuclei after creating the nuclei on the substrates. We demonstrated that not only the crystallinity but also the electrical properties of the resulting films were improved very much compared with those of continuously grown films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 945
Copyright
Copyright © Materials Research Society 1998

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References

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