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Direct Measurement of the Mobiuty-Lifetime Product of Holes and Electrons in an Amorphous Silicon P-I-N Cell

Published online by Cambridge University Press:  25 February 2011

Richard. S. Crandall ,
Kyle Sadlon ,
Jeffrey Kalina  and
Alan E. Delahoy
Richard. S. Crandall
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Kyle Sadlon
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
Jeffrey Kalina
Affiliation:
Chronar Corporation, International Corporate Center, Princeton NJ
Alan E. Delahoy
Affiliation:
Chronar Corporation, International Corporate Center, Princeton NJ
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Abstract

Direct measurements of the electron and hole mobility-lifetime products, μτ, on a 10μm thick hydrogenated amorphous silicon (a-Si:H) pi- n solar cell are presented. The μτ products, determined from charge collection using strongly absorbed light are μτ|h = 2.2 × 10−8cm2V−1 and μτ|e = 3.0 × 10−7cm2V−1, for holes,and electrons, respectively. Measurements of the drift length, ld = μτ|e + μτ|h, using uniformly absorbed light and analyzed using the uniform field model,1 give ld = 2.9 × 10−7 cm2 V−1 s−1. These results are the first experimental evidence that the carrier with the larger, μτ product determines the photovoltaic behavior. Evidence for space charge limited transport of photogenerated holes is also be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 423
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1 Crandall, R. S., J. Appl. Phys. 54, 7176 (1983).CrossRefGoogle Scholar
2 Marshall, J. M., Street, R. A. and Thompson, M. J., J. Non. Cryst. Sol. 66, 175 (1984).Google Scholar
3 The the drift length is the mean distance a charge moves in the direction of the electric field before trapping.Google Scholar
4 Crandall, R. S., J. Appl. Phys. 55, 4418 (1984).Google Scholar
5 Crandall, R. S., Kalina, J. and Delahoy, A, E., Mat. Res. Soc. Symp. Proc. 118, 593 (1980).Google Scholar
6 Lampert, M. A. and Schilling, R. B., in Semiconductors and Semimetals, edited by Beer, A. (Academic, New York, 1970), Vol.6,pp. 1–95.Google Scholar