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Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE

Published online by Cambridge University Press:  15 February 2011

T. J. de Lyon ,
S. M. Johnson ,
C. A. Cockrum ,
O. K. Wu  and
J. A. Roth
T. J. de Lyon
Affiliation:
Hughes Research Labs, 3011 Malibu Canyon Rd., Malibu, California 90265
S. M. Johnson
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, California 93117
C. A. Cockrum
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, California 93117
O. K. Wu
Affiliation:
Hughes Research Labs, 3011 Malibu Canyon Rd., Malibu, California 90265
J. A. Roth
Affiliation:
Hughes Research Labs, 3011 Malibu Canyon Rd., Malibu, California 90265
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Abstract

Epitaxial films of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0–8 degrees towards the [011] direction. The films were characterized with x ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Through use of ZnTe buffer layers, single crystal CdZnTe(100) films have been demonstrated on both 4° and 8° misoriented Si with structural quality comparable to that obtained with GaAs/Si composite substrates. X ray rocking curves for ZnTe(400) with FWHM less than 300 arcseconds and for CdZnTe(400) with FWHM less than 160 arcseconds have been obtained for as-grown films. The observed surface morphologies are superior to those obtained on GaAs/Si composite substrates. HgCdTe(100) films with x ray FWHM as low as 55 arcseconds and average etch pit densities of 5 × 106 cm−2 have been deposited by liquid phase epitaxy on these MBE CdZnTe/ZnTe/Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 197
Copyright
Copyright © Materials Research Society 1994

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