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Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE

  • T. J. de Lyon (a1), S. M. Johnson (a2), C. A. Cockrum (a2), O. K. Wu (a1) and J. A. Roth (a1)...

Abstract

Epitaxial films of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0–8 degrees towards the [011] direction. The films were characterized with x ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Through use of ZnTe buffer layers, single crystal CdZnTe(100) films have been demonstrated on both 4° and 8° misoriented Si with structural quality comparable to that obtained with GaAs/Si composite substrates. X ray rocking curves for ZnTe(400) with FWHM less than 300 arcseconds and for CdZnTe(400) with FWHM less than 160 arcseconds have been obtained for as-grown films. The observed surface morphologies are superior to those obtained on GaAs/Si composite substrates. HgCdTe(100) films with x ray FWHM as low as 55 arcseconds and average etch pit densities of 5 × 106 cm−2 have been deposited by liquid phase epitaxy on these MBE CdZnTe/ZnTe/Si substrates.

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1. Tung, T., J. Cryst. Growth 86, 161 (1988). See also See also T. Tung, L. V. DeArmond, R. F. Herald, P. E. Herning, M. H. Kalisher, D. A. Olson, R. F. Risser, A. P. Stevens, and S. J. Tighe, (Soc. Phot. Opt. Inst. Eng. 1735, Bellingham, WA 1992), in press.
2. Sen, S., Konkel, W. H., Tighe, S. J., Bland, L. G., Sharma, S. R., and Taylor, R. E., J. Cryst. Growth 86, 111 (1988).
3. Kay, R., Bean, R., Zanio, K., Ito, C., and McIntyre, D., Appl. Phys. Lett. 51, 2211 (1987).
4. Johnson, S. M., Ahlgren, W.L., Kalisher, M.H., James, J.B., and Hamilton, W.J. Jr.,, in Properties of Il-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems, Materials Research Society Symposium Proceedings, Vol.161, edited by Schetzina, J.F., Schaake, H. F., and Bartoli, F. J. Jr., (Materials Research Society, Pittsburgh, PA, 1990), p. 351.
5. Arias, J. M., Zandian, M., Shin, S. H., McLevige, W. V., Pasko, J. G., and DeWames, R. E., J. Vac. Sci. Technol. B9, 1646 (1991).
6. Korenstein, R., Madison, P., and Hallock, P., J. Vac. Sci. Technol. B10, 1370 (1992).
7. Sporken, R., Chen, Y. P., Sivananthan, S., Lange, M. D., and Faurie, J. P., J. Vac. Sci. Technol. B10, 1405 (1992).
8. Lin, M. S., Chou, R. L., and Chou, K. S., J. Cryst. Growth 77, 475 (1986).
9. Wang, W.-S., Ehsani, H., and Bhat, I., 1992 U. S. Workshop on Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials (October 13–15, 1992, Boston, MA), to be published in J. Electron. Matls.
10. Sporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., and Faurie, J. P., Appl. Phys. Lett. 55, 1879 (1989).
11. Grunthaner, P. J., Grunthaner, F. J., Fathauer, R. W., Lin, T. L., Hecht, M. H., Bell, L. D., Kaiser, W. J., Schowengerdt, F. D., Mazur, J. H., Thin Solid Films 183, 197 (1989).
12. Fenner, D. B., Biegelsen, D. K., and Bringans, R. D., J. Appl. Phys. 66, 419 (1989).
13. Johnson, S. M., Sen, S., Konkel, W.H., and Kalisher, M. H., J. Vac. Sci. Technol. B9, 1897 (1991).
14. Hähnert, I. and Schenk, M., J. Cryst. Growth 101, 251 (1990).
15. Shtrikman, H., Oron, M., Raizman, A., and Cinader, G., J. Electron. Mater. 17, 105 (1988).
16. Sporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., and Faurie, J. P., Appl. Phys. Lett. 55, 1879 (1989).
17. Faurie, J. P., Hsu, C., Sivananthan, S., and Chu, X., Surf. Sci. 168, 473 (1986).
18. Feldman, R. D., Austin, R. F., Bridenbaugh, P. M., Johnson, A. M., Simpson, W. M., Wilson, B. A., and Bonner, C. E., J. Appl. Phys. 64, 1191 (1988).
19. Johnson, S. M., Vigil, J. A., James, J. B., Cockrum, C. A., Konkel, W. H., Kalisher, M. H., Risser, R. F., Tung, T., Hamilton, W. J., Ahlgren, W. L., and Myrosznyk, J. M., 1992 U. S. Workshop on Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials (October 13–15, 1992, Boston, MA), to be published in J. Electron. Matls.

Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE

  • T. J. de Lyon (a1), S. M. Johnson (a2), C. A. Cockrum (a2), O. K. Wu (a1) and J. A. Roth (a1)...

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