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Direct Electrical Characterization of Metal Induced Lateral Crystallization Regions by Spreading Resistance Probe Measurements

Published online by Cambridge University Press:  01 February 2011

Alexandre M. Myasnikov ,
Vincent M.C. Poon ,
Vincent T.C. Leung ,
Mansun Chan  and
Lawrence C.F. Cheng
Alexandre M. Myasnikov
Affiliation:
Institute of Semiconductors Physics, Novosibirsk, Russia
Vincent M.C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Vincent T.C. Leung
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
Lawrence C.F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
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Abstract

Material characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm2/Vs to 34 cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.2
Copyright
Copyright © Materials Research Society 2003

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