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Direct Deposition Reactions Between Nickel and Silicon Substrates

Published online by Cambridge University Press:  21 February 2011

Lin Zhang  and
Douglas G. Ivey
Lin Zhang
Affiliation:
Department of Mining, Metallurgical, and Petroleum EngineeringUniversity of Alberta, Edmonton, Alberta, Canada, T6G 2136
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical, and Petroleum EngineeringUniversity of Alberta, Edmonton, Alberta, Canada, T6G 2136
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Abstract

Silicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 335
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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