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Diffusion of Implanted Nitrogen in Silicon at High Doses

Published online by Cambridge University Press:  21 March 2011

Lahir Shaik Adam ,
Lance Robertson ,
Mark E. Law ,
Kevin Jones ,
Kevin Gable ,
Suri Hegde  and
Omer Dokumaci
Lahir Shaik Adam
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611, USA
Lance Robertson
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611, USA
Mark E. Law
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611, USA
Kevin Jones
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611, USA
Kevin Gable
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611, USA
Suri Hegde
Affiliation:
SRDC, IBM Corp., East Fishkill, NY 12533
Omer Dokumaci
Affiliation:
SRDC, IBM Corp., East Fishkill, NY 12533
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Abstract

Nitrogen implantation is used to retard gate oxide growth thereby making it particularly usefulfor dual- VT and System On A chip technologies. This paper discusses the diffusion behavior and the concomitant defect evolution at high doses of implanted nitrogen in silicon. This paper shows that as the nitrogen implant dose is increased, the extent of nitrogen diffusion reduces. This paper also reports based onTEM studies, that upon annealing at 750°C, 5 × 10014 N2+/cm2, 40 keV implant produces Type I extended defects. However, 2 × 1015 N2+/cm2, 40 keV implant, produces a continuous amorphous layer to a depth ofabout 800 to 900 Å from the surface. In addition, upon annealing at 750°C, the 2 × 1015 N2+/cm2, 40 keV implant produces Type V or solid solubility defects in addition to End of Range or Type II defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J3.10
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Liu, C.T., et. al., IEDM 96, pp. 499–502 Google Scholar
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3. Jones, K.S., et. al., Applied Physics A, v45, pp. 1–34 Google Scholar