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Diffusion of Dopants in (111) Silicon During High Temperature Heat Treatment in Nitrogen

Published online by Cambridge University Press:  21 February 2011

T. Kook  and
R. J. Jaccodine
T. Kook
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
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Abstract

The diffusion of various dopants( B, P, As, and Sb) in (111) silicon during high temperature( 1100°C ) heat treatment in nitrogen depends on the capping layers, i.e., SiO2, Si3 N4, and SiO2 + Si3 N4, layers. The junction motion of all dopants were retar ed in the bare silicon compared with that in the SiO2 + Si3 N4 capped silicon. The apparently retarded junction motion of As and sb diffused specimens in the bare silicon is due to the severe out-diffusion loss of dopant atoms and As and Sb diffusion are in fact enhanced during thermal nitridation of silicon in N2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 83
Copyright
Copyright © Materials Research Society 1985

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References

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