Skip to main content Accessibility help
×
Home

Diffusion, Complexing and Precipitation of Transition Metals in Silicon

  • Eicke R. Weber (a1)

Abstract

The diffusion, solubility, complexing, and gettering of transition metals in silicon are reviewed with special emphasis on the observed chemical trends. 3d metals appear dominantly on interstitial sites in thermal equilibrium. Their diffusivity and solubility increases markedly with atomic number. Going from the 3d metals vertically down in the periodic table, a clear trend towards substitutional solution is obvious. Observation of deep level defects, complexing and gettering is strongly dependend on the respective mobility of the metal atoms. Understanding of the thermodynamics of complexing and gettering allows to define heat treatment procedures favourable to minimize detrimental effects from transition metals in silicon.

Copyright

References

Hide All
[1] Weber, E.R., Appl. Phys. A30, 1 (1983)
[2] Weber, E.R. and Wiehl, N., in: “Defects in Semiconductors II”, eds. Mahajan, S., Corbett, J.W., p. 19 (1983)
[3] Hansen, J., Bergholz, W., Schroeter, W., Verhandlg. DPG 18, 613 (1983)
[4] Ohta, E. and Sakata, M., Solid State Electr. 23 759 (1980)
[5] VanWieringen, A. and Warmoltz, N., Physica 22, 849 (1956)10.1016/S0031-8914(56)90039-8
[6] Pell, E.M., Phys. Rev. 119, 1222 (1960)
[7] Ludwig, G.W., Woodbury, H.H., Solid State Physics 13, 223 (1962)10.1016/S0081-1947(08)60458-0
[8] Wezep, D.A. van, Kemp, R. van, Ammerlaan, C.A.J., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, Ca. 1984, In print
[9] Kitagawa, H., Hashimoto, K., Yoshida, M., Jpn. J. Appl. Phys. 21, 276 (1982)10.1143/JJAP.21.276
[10] Ledebo, L.A., Wang, Z.G., Appl. Phys. Lett. 4, 680 (1983)10.1063/1.94070
[11] Brotherton, S.D., Bradley, P., Gill, A., Weber, E.R., J. Appl. Phys. 55, 952 (1984)10.1063/1.333149
[12] Stolwijk, N.A., these proceedings
[13] Woodbury, H.H., Ludwig, G.W., Phys. Rev. 126, 466 (1962)
[14] Milligan, R.F., Anderson, F.G., Watkins, G.D., Phys. Rev. B29, 2819 (1984)10.1103/PhysRevB.29.2819
[15] Brotherton, S.D., King, M.J., Parker, G.J., J. Appl. Phys. 52, 4649 (1981)10.1063/1.329346
[16] Janzen, E., Grimmeiss, H.G., Lodding, A., Deline, Ch., J. Appl. Phys. 53, 7367 (1982)10.1063/1.330104
[17] Grimmeiss, H.G., Janzen, E., Ennen, H., Schirmer, O., Schneider, J., Woerner, R., Holm, C., Sirti, E., Wagner, P., Phys. Rev. B24, 4571 (1981)
[18] Goesele, U., Tan, T.Y., these proceddings
[19] Antoniadis, D.A., these proceedings
[20] Scheffler, M., Beeler, F., Jepsen, O., Gunnarsson, O., Anderson, O.K., Bachelet, G.B., Proc. 13th Internat. Conf. on Defects in Semiconductors, Coronado 1984, in print
[21] Conzelmann, H., Graff, K., Weber, E.R., Appl. Phys. A30, 169 (1983)10.1007/BF00620536
[22] Wuenstel, K., Froehner, K.H., Wagner, P., Physica 116B, 301 (1983)
[23] Lemke, H., phys. stat. sol. (a) 76, 223 (1983)10.1002/pssa.2210760126
[24] Lee, Y.H., Kleinhenz, R.L., Corbett, J.W., Inst. Phys. Conf. Ser. 4, 521 (1979)
[25] Lemke, H., phys. stat. sol. (a) 75, 473 (1983)
[26] Brotherton, S.D., Bradley, P., Bicknell, J., J. Appl. Phys. 50 3396 (1979)10.1063/1.326331
[27] Zunger, A., Katayama-Yoshida, H., unpublished
[28] Vogl, P., Verhandlg. DPG 18 563 (1983)
[29] Ourmazd, A., Schroeter, W., Appl. Phys. Lett. 45, 781 (1984)10.1063/1.95364
[30] Tan, T.Y., Gardner, E.E., Tice, W.K., Appl. Phys. Lett. 30, 175 (1977)10.1063/1.89340
[31] Nauka, K., Lagowski, J., Gatos, H., these proceedings
[32] Buck, T.M., Poate, J.M., Pickar, K.A., Hsleh, C.M., Surf. Sci. 35, 362 (1973)10.1016/0039-6028(73)90225-2
[33] Scott, M.P., Caubin, L., Chen, D., Weber, E.R., Rose, J., Tucker, T., these proceedings

Diffusion, Complexing and Precipitation of Transition Metals in Silicon

  • Eicke R. Weber (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed