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Diffusion and Interdiffusion in Multilayered Semiconductor Systems

Published online by Cambridge University Press:  25 February 2011

A. Ourmazd ,
Y. Kim  and
M. Bode
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
Y. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
M. Bode
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
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Abstract

We apply quantitative chemical mapping techniques to study thermal interdiffusion and ion-implantation induced intermixing at single heterointerfaces at the atomic level. Our results show thermal interdiffusion to be strongly depth dependent. This is related to the need for the presence of native point defects (interstitials and vacancies) to bring about interdiffusion. Since their initial concentration in the bulk is negligible, the point defects must be injected at the surface and transported to the interface for interdiffusion to occur. In the case of ion-implanted samples, we find the passage of a single energetic ion through a sample at 77 K causes significant intermixing, even when the sample receives no subsequent thermal treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 639
Copyright
Copyright © Materials Research Society 1990

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References

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