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Diffraction Contrast Image Analysis on the Facet Defects of the Laser Diodes Caused by ECR Cleaning Process
Published online by Cambridge University Press: 01 February 2011
Abstract
Cross-sectional and plan-view TEM techniques were used to study the ion beam passivation of 980 nm laser pump diodes. It is found that under certain operation conditions, the ECR cleaning process produces crystal defects in the facets region of the diodes. By TEM diffraction contrast image analysis, the crystal defects are determined as Frank dislocation loops at the {111} planes of the GaAs crystal. The details of the TEM analysis procedures are described in the paper. In order to obtain high quality passivation of the diodes, the parameters of the ECR cleaning process have to be optimized to eliminate the induced defects.
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- Copyright © Materials Research Society 2004
References
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