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Dielectric Properties of Highly Oriented Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

Published online by Cambridge University Press:  15 February 2011

S. Kalpat ,
X. Du ,
I.R. Abothu ,
A. Akiba ,
H. Goto ,
S. Trolier McKnistry  and
K. Uchino
S. Kalpat
Affiliation:
International Center for Actuators and Transducers, Materials Research Laboratory, The Pennsylvania State University, University Park, Pa 16802
X. Du
Affiliation:
International Center for Actuators and Transducers, Materials Research Laboratory, The Pennsylvania State University, University Park, Pa 16802
I.R. Abothu
Affiliation:
Institute of Materials Research and Engineering, Kent Ridge, Singapore119260
A. Akiba
Affiliation:
OMRON Corporation, Tsukuba city, IbarakiPref, Japan300-4247
H. Goto
Affiliation:
Institute of Materials Research and Engineering, Kent Ridge, Singapore119260
S. Trolier McKnistry
Affiliation:
International Center for Actuators and Transducers, Materials Research Laboratory, The Pennsylvania State University, University Park, Pa 16802
K. Uchino
Affiliation:
International Center for Actuators and Transducers, Materials Research Laboratory, The Pennsylvania State University, University Park, Pa 16802
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Abstract

Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 3
Copyright
Copyright © Materials Research Society 2000

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