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Dielectric Properties of (Ba,Sr)TiO3 Thin Film Capacitors Fabricated on Alumina Substrates

Published online by Cambridge University Press:  11 February 2011

I. P. Koutsaroff ,
A. Kassam ,
M. Zelner ,
P. Woo ,
L. McNeil ,
T. Bernacki ,
A. Cervin-Lawry  and
A. Patel
I. P. Koutsaroff
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
A. Kassam
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
M. Zelner
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
P. Woo
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
L. McNeil
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
T. Bernacki
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
A. Cervin-Lawry
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
A. Patel
Affiliation:
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5 Canada
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Abstract

Double layer (DL) Ba0.7Sr0.3TiO3 (BST) capacitors with Pt electrodes have been fabricated with similar growth conditions on different substrates. The substrates used in the present study were r-plane sapphire, polycrystalline alumina Al2O3 (99.6% and 96%), and glazed polycrystalline alumina. BST films were grown by metal-organic decomposition (MOD) method. By varying the annealing conditions which affects the formation of the crystalline structure, significant changes in the dielectric properties of the BST films have been observed. BST films were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Powder X-ray Diffractometer (PXRD). These observations showed that BST films grown at lower temperatures on alumina substrates exhibited the smallest grain size. BST films of the same thickness prepared under the same thermal processing conditions showed higher capacitance when grown on all types of alumina-based substrates compared to those deposited on control SiO2/Si. The higher capacitance on alumina was always associated with larger dissipation factor, and lower or similar leakage current density. The final tuning, of the dielectric properties of BST DL capacitors on non-silicon substrates, was correlated to the initial film formation temperature and post-annealing conditions of the BST films. The leakage current density, of DL BST capacitors fabricated on glazed alumina, becomes smallest when the BST processing temperature was lowered by 100 °C compared to the control SiO2/Si. The typical achieved leakage current density for 1500×1500 μm2 DL capacitors on glazed alumina was 3.8×10-9 A/cm2 at 250 kV/cm (36.5 fF/μm2), about 3 times lower than on SiO2/Si substrates (1.1×10-8 A/cm2 at 250 kV/cm, 31 fF/μm2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U6.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Ezhilvalavan, S., Tseng, T.-Y., Mater. Chem. Phys., 65, 227, (2000).Google Scholar
[2] Watt, M.M., Woo, P., Rywak, T., McNeil, L., Kassam, A., ISAF 98, Proc. of the 11th IEEE Inter. Symp. on Applications of Ferroelectrics, 11, (1998).Google Scholar
[3] Klee, M., Wissen, D., Keur, W., Kiewitt, R., Bausen, D. and Lok, P., Mat. Res. Soc. Symp. Proc, Vol. 655, CC13.1.1–11,(2001).Google Scholar
[4] Horwitz, J.S., Chang, W.T., Kim, W., Qadri, S.B., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B., J. Electroceram., 4, 357, (2000).Google Scholar
[5] Tahan, D.M., Safari, A., Klein, L.C., J. Am. Ceram. Soc, 79, 1593, (1996).Google Scholar
[6] Nayak, M., and Tseng, T.-Y., Thin Solid Films, 408, 194, (2002).Google Scholar
[7] Lee, S.Y., and Tseng, T.Y., Appl. Phys Lett., 80, 1797, (2002).Google Scholar
[8] Koutsaroff, I.P., Zelner, M., Woo, P., McNeil, L., Buchbinder, M., Cervin-Lawry, A., Proc of the 14th Inter. Symp. on Integrated Ferroelectrics, 45, 97 (2002).Google Scholar
[9] Sharma, PK, Varadan, V.V., Varadan, V.K., Chem. Mater., 12, 2590, (2000).Google Scholar
[10] Koutsaroff, IP, Woo, P., McNeil, L., Zelner, M., Kassam, A., Capanu, M., Chmiel, L., McClelland, B., and Cervin-Lawry, A., ISAF 2002, Proc. of the 2002 13th IEEE Inter. Symp. on the Applications of Ferroelectrics, (2002), in press.Google Scholar
[11] Samantaray, C.B., Dhar, A., Mukherjee, M.L., Bhattacharya, D., and Ray, S.K., Mater. Sci. Eng., B88, 14, (2002).Google Scholar
[12] Fujii, E., Uemoto, Y.; Hayashi, S.; Nasu, T.; Shimada, Y.; Matsuda, A.; Kibe, M.; Azuma, M.; Otsuki, T.; Kano, G.; Scott, M.; McMillan, L.D.; Paz de Araujo, C. Electron Devices Meeting (IEDM) Tech. Dig., 267, (1992).Google Scholar