Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-27T02:59:14.578Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Nucleation Studies on Refractory Metals and Nickel

Published online by Cambridge University Press:  21 February 2011

S. D. Wolter ,
B. R. Stoner ,
P. C. Yang ,
W. Lui  and
J. T. Glass
S. D. Wolter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
B. R. Stoner
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
P. C. Yang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
W. Lui
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
J. T. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919
Get access

Abstract

Diamond nucleation has been investigated on a variety of potential heteroepitaxial substrate materials. Previous work in this laboratory has demonstrated heteroepitaxial nucleation on both Si and SiC substrates via bias-enhanced nucleation (BEN). In this study the effects of BEN of diamond on refractory metal substrates is investigated in detail. Initial data suggest a strong correlation between the carbide forming nature of the substrate material and the rate of nucleation during biasing. Our second avenue of research involves low pressure diamond growth on nickel. This material is a promising material due to its close lattice match and recent evidence of epitaxy reported by other researchers. To form heteroepitaxial diamond on nickel a high temperature pretreatment routine has been established and is the basis for this area of research. The relative importance of hydrogen absorption during this routine is explored and correlated to the formation and degree of diamond epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 291
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Williams, B. E. and Glass, J. T., 4:2 (1989) 373.Google Scholar
2. Williams, B. E., Stoner, B. R., Asbury, D. A. and Glass, J. T., presented at Diamond and Diamond-Like Films and Coatings, NATO Advanced Study Institute, Series B: Physics, Castelvecchio Pascoli, Italy, 1990, Plenum, New York, 1990.Google Scholar
3. Belton, D. N., Harris, S. J., Schmieg, S. J., Wiener, A. M. and Perry, T. A., Appl. Phys. Lett., 54:5 (1989) 416.Google Scholar
4. Joffreau, P. O., Haubner, R. and Lux, B., Int. J. of Ref. Hard Metals, 7:4 (1988) 186.Google Scholar
5. Sato, Y., Yashima, I., Fujita, H., Ando, T. and Kamo, M., presented at Materials Research Society, Pittsburgh, PA, 1991, p. 371.Google Scholar
6. Zhu, W., Yang, P. C. and Glass, J. T., Appl. Phys. Lett., 63:12 (1993)Google Scholar
7. Yang, P. C., Zhu, W. and Glass, J. T., J. Mater. Res., 8:8 (1993)Google Scholar
8. Zhu, W., Yang, P. C. and Glass, J. T., presented at Proc. of the 2nd International Conference on Applications of Diamond Films, Tokyo, Japan, 1993.Google Scholar
9. Stoner, B. R., Ma, G.-H. M., Wolter, S. D. and Glass, J. T., Phys. Rev. B, 45:19 (1992) 11067.Google Scholar
10. Yugo, S., Kanai, T., Kimura, T. and Muto, T., Appl. Phys. Lett., 58:10 (1991) 1036.Google Scholar
11. Wolter, S. D., Stoner, B. R. and Glass, J. T., Dia. Rel. Mat., In print (1994).Google Scholar
12. Stoner, B. R. and Glass, J. T., Appl. Phys. Lett., 60:6 (1992) 698.Google Scholar
13. Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E. and Southworth, P., Appl. Phys. Lett., 62:11 (1993) 1215.Google Scholar