Skip to main content Accessibility help
×
Home

Diamond and Polycrystalline Diamond for MEMS Applications: Simulations and Experiments

  • Tahir Çağin (a1), Jianwei Che (a1), Michael N. Gardos (a2) and William A. Goddard (a1)

Abstract

To date most of the MEMS devices are been based on Silicon. This is due to the technological know-how accumulated on manipulating, machining, manufacturing of Silicon. However, only very few devices involve moving parts. This is because of the rapid wear arising from high friction in these Silicon based systems. Recent tribometric experiments carried out by Gardos on Silicon and polycrystalline diamond show that this rapid wear is caused by a variety of factors, related both to surface chemistry and cohesive energy density of these likely MEMS bearing materials. Therefore, theoretical and tribological characterization of Si and PCD surfaces is essential prior to device fabrication to assure reliable MEMS operation unded various atmospheric environments, especially at elevated temperatures.

In this paper, we summarize tribological experiments and theoretical studies of friction and wear processes on diamond surfaces. We studied the atomic friction of diamond (100)-surface employing an extended bond-order-dependent potential for hydrocarbon systems in MD simulations.

Copyright

References

Hide All
1. Gabriel, K. J., Sci. Am. 273, 118121 (1995); Proc. IEEE 86, 1534–35 (1998).
2. Gardos, M. N., Tribol. Lett. 2, 173 (1996).
3. Gardos, M. N., Tribol. Lett. 2, 355 (1996).
4. Gardos, M. N., Tribol. Lett. 4, 175 (1998).
5. Gardos, M. N., in “Protective Coatings and Thin Films,” Proc. NATO Adv. Res. Workshop, May 30 - June 5, 1996, NATO ARW Series, eds. Y., Pauleau and P.B., Barna, (Kluwer Academic Publishers, Dordrecht, The Netherlands, 1997), p.185.
6. Gardos, M. N. and Soriano, B. L., J. Mater. Res. 5, 2599 (1990).
7. Gardos, M. N., in “Synthetic Diamond: Emerging CVD Science and Technology,” Electrochem. Soc. Monograph, eds. K.E., Spear, and J.P., Dismukes (Wiley, New York, 1994), ch. 12, p. 419.
8. Gardos, M. N. and Ravi, K. V., Diam. Films Technol. 4, 139 (1994).
9. Walch, S. P., Goddard, W. A. III, and Çağin, T., “Computational Studies of the Interaction of H/H2 with Diamond and Silicon Surfaces,” on line paper presented at the 1998 Foresight Molecular Nanotechnology Conference, http://www.foresight.org/Conferences/MNT6/Papers/Walch/, to be published.
10. Brenner, D. W., Phys. Rev. B42, 9458 (1990).
11. Che, J., Çağin, T., and Goddard, W. A. III, “Extenion of Bond Order Dependent Potentials to include Long Range Interactions,” Theor. Chem. Acct. 102, 346354 (1999).
12. Che, J., Çağin, T., and Goddard, W. A. III, “Studies of Fullerenes and Carbon Nanotubes by an Extended Bond Order Potential,” Nanotechnology, 10, 263268 (1999).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed