Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-04-30T23:33:32.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Device Performance of Laser Annealed Double Heterostructure GaAlAs Materials1

Published online by Cambridge University Press:  15 February 2011

M.J. Brett ,
J.A. Rostworowski ,
R.R. Parsons ,
A.J. Springthorpe ,
C.M. Look  and
J.C. Dyment
M.J. Brett
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
J.A. Rostworowski
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
R.R. Parsons
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
A.J. Springthorpe
Affiliation:
Bell-Northern Research, Ottawa, Canada
C.M. Look
Affiliation:
Bell-Northern Research, Ottawa, Canada
Get access

Abstract

We have laser annealed double heterostructure GaAlAs material with homogeneous ruby laser pulses such that maximum laser light absorption occurs in the active layer. With laser anneal intensities sufficient to melt the active layer, the radiative efficiency of the double heterostructures was reduced by a factor of two. Performance of electroluminescent devices fabricated from annealed material was much worse than performance of devices fabricated from unannealed material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 295
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

1

Supported in part by the NSERC of Canada, grant #67–7804.

References

REFERENCES

1. Rostworowski, J.A., Parsons, R.R. and Hutcheon, D.G., Appl. Phys. Lett. 34, 934 (1979).CrossRefGoogle Scholar
2. Parsons, R.R., Rostworowski, J.A., Springthorpe, A.J. and Dyment, J.C., Laser and Electron Beam Processing of Materials–1979 (Materials Research Society), p. 373.Google Scholar
3. Casey, H.C. Jr. and Panish, M.B., “Heterostructure Lasers”, Part A and Part B, 1978 (Academic Press, New York).Google Scholar
4. Kressel, H. and Butler, J.K., “Semiconductor Lasers and Heterojunction LED's”, 1978 (Academic Press, New York).Google Scholar
5. Hutcheon, D.G., unpublished.Google Scholar
6. Cullis, A.G., Webber, H.C. and Bailey, P., J. Phys. E 12, 690 (1979).CrossRefGoogle Scholar
7. Snell, D.D. and Casey, H.C. Jr., J. Appl. Phys. 45, 800 (1974).Google Scholar
8. Henry, C.H., Petroff, P.M., Logan, R.A. and Merritt, F.R., J. Appl. Phys. 50, 3721 (1979).CrossRefGoogle Scholar