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Device Failures in Pressure Cooker Tests at 130°C

Published online by Cambridge University Press:  25 February 2011

J. F. Burgess  and
A. J. Yerman
J. F. Burgess
Affiliation:
General Electric Company Corporate Research and Development Center Schenectady, NY 12301
A. J. Yerman
Affiliation:
General Electric Company Corporate Research and Development Center Schenectady, NY 12301
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Abstract

The results obtained from Moisture-Temperature-Bias testing of Power- MOSFET at 130°C and 85%RH are examined. A variety of packaging techniques were tested varying from plastic encapsulation materials/methods to fully hermetic. Unprotected devices were tested as controls. The predominant failure mechanism observed was aluminum corrosion, which was manifested initially as a leakage current increase and eventually as visually observable dissolution of aluminum and eventual open circuits.

This paper examines the critical part that surface contamination plays in the corrosion process, particularly where condensed water films can form at the metal surface. The effectiveness of various plastic coating methods are viewed in the light of this concept. Aluminum lead bonds were more susceptable to corrosion than expected. A number of materials were identified that showed resistance to pressure cooker conditions.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 187
Copyright
Copyright © Materials Research Society 1986

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