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Development of Vertically Integrated Imaging and Particle Sensors

Published online by Cambridge University Press:  01 February 2011

N. Wyrsch ,
C. Miazza ,
S. Dunand ,
A. Shah ,
N. Blanc ,
R. Kaufmann ,
L. Cavalier ,
G. Anelli ,
M. Despeisse  and
P. Jarron
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N. Wyrsch
Affiliation:
Institut de Microtechnique, CH-2000 Neuchatel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, CH-2000 Neuchatel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, CH-2000 Neuchatel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, CH-2000 Neuchatel, Switzerland
N. Blanc
Affiliation:
CSEM SA, CH-8048 Zurich, Switzerland
R. Kaufmann
Affiliation:
CSEM SA, CH-8048 Zurich, Switzerland
L. Cavalier
Affiliation:
CSEM SA, CH-8048 Zurich, Switzerland
G. Anelli
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
M. Despeisse
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
P. Jarron
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
D. Moraes
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
A. G. Sirvent
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
G. Dissertori
Affiliation:
ETH-Zurich, CH-8093 Zurich, Switzerland.
G. Viertel
Affiliation:
ETH-Zurich, CH-8093 Zurich, Switzerland.
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Abstract

Integrated imaging and particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for imaging and direct particle detection. These devices were first deposited on glass substrates and later on CMOS readout chips. With an optimization of the material properties and of the diode, a dark current of 1 pA/cm2 could be achieved on p-i-n structures at reverse bias voltage of 1 V. CMOS imagers, incorporating these optimized diodes were then fabricated and characterized. Very thick diodes (with thicknesses up to 50 μm) were also optimized and deposited on glass and on CMOS readout chips. Particle detectors in TFA technology with 12 and 30 μm a-Si:H n-i-p diodes have been fabricated and characterized using light pulse illumination. Direct detection of single low-energy beta particles has been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.14
Copyright
Copyright © Materials Research Society 2003

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