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Development of SiO2 Dielectric Thin Film Prepared by the Low-temperature Solution Process

Published online by Cambridge University Press:  31 January 2011

Takehito Kodzasa ,
Sei Uemura ,
Kouji Suemori ,
Manabu Yoshida ,
Satoshi Hoshino ,
Noriyuki Takada  and
Toshihide Kamata
Takehito Kodzasa
Affiliation:
tak-kozasa@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Tsukuba, Ibaraki, Japan
Sei Uemura
Affiliation:
sei-uemura@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibraki, 305-8565, Japan, +81-29-861-4516, +81-29-861-4536
Kouji Suemori
Affiliation:
kouji-suemori@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Tsukuba, Ibaraki, Japan
Manabu Yoshida
Affiliation:
yoshida-manabu@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 51-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan, +81-29-861-4516, +81-29-861-4536
Satoshi Hoshino
Affiliation:
s.hoshino@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Tsukuba, Ibaraki, Japan
Noriyuki Takada
Affiliation:
n-takada@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Tsukuba, Ibaraki, Japan
Toshihide Kamata
Affiliation:
t-kamata@aist.go.jp, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Central 5, Tsukuba, Ibaraki, 305-8565, Japan
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Abstract

It is mostly important to develop the fabrication technology of the dielectric thin film with high insulation performance and surface flatness by large-area printing process. We have developed a technique to fabricate a silicon dioxide (SiO2) dielectric thin film by the low temperature solution process. The thin film prepared by about 170°C showed excellent dielectric performance with high resistivity in the order of 10 to the 16 Ωcm and surface flatness with the same degree of thermal oxidized SiO2 thin film on the silicon wafer (RMS=0.15nm). In addition, it is showed that the production of thick film of SiO2 with high dielectric performance and surface flatness is possible by applying over-coating technique. These indicate that this SiO2 production technique is greatly useful for the large-area printed electronics technology.

Keywords

dielectricelectrical propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1196: Symposium C – Large-Area Processing and Patterning for Optical. Photovoltaic and Electronic Devices-2009 , 2009 , 1196-C04-04
Copyright
Copyright © Materials Research Society 2010

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References

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