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Development of SiO2 Dielectric Thin Film Prepared by the Low-temperature Solution Process

  • Takehito Kodzasa (a1), Sei Uemura (a2), Kouji Suemori (a3), Manabu Yoshida (a4), Satoshi Hoshino (a5), Noriyuki Takada (a6) and Toshihide Kamata (a7)...

Abstract

It is mostly important to develop the fabrication technology of the dielectric thin film with high insulation performance and surface flatness by large-area printing process. We have developed a technique to fabricate a silicon dioxide (SiO2) dielectric thin film by the low temperature solution process. The thin film prepared by about 170°C showed excellent dielectric performance with high resistivity in the order of 10 to the 16 Ωcm and surface flatness with the same degree of thermal oxidized SiO2 thin film on the silicon wafer (RMS=0.15nm). In addition, it is showed that the production of thick film of SiO2 with high dielectric performance and surface flatness is possible by applying over-coating technique. These indicate that this SiO2 production technique is greatly useful for the large-area printed electronics technology.

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References

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1. Sirringhaus, H., Adv. Mater., 17, 24112425 (2005).
2. Kodzasa, T., et al. IDW'06 Proceedings, 881884 (2006).
3. Kodzasa, T., Clean Technology, 17, 11, 5457 (2007).

Keywords

Development of SiO2 Dielectric Thin Film Prepared by the Low-temperature Solution Process

  • Takehito Kodzasa (a1), Sei Uemura (a2), Kouji Suemori (a3), Manabu Yoshida (a4), Satoshi Hoshino (a5), Noriyuki Takada (a6) and Toshihide Kamata (a7)...

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