Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-26T22:54:30.582Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of SiC-based Gas Sensors for Aerospace Applications

Published online by Cambridge University Press:  15 March 2011

G. W. Hunter ,
P. G. Neudeck ,
J. Xu ,
D. Lukco ,
A. Trunek ,
M. Artale ,
P. Lampard ,
D. Androjna ,
D. Makel  and
B. Ward
...Show all authors
G. W. Hunter
Affiliation:
NASA Glenn Research Center, Instrumentation and Controls Division 21000 Brookpark Road, M/S 77-1, Cleveland OH 44135
P. G. Neudeck
Affiliation:
NASA Glenn Research Center, Instrumentation and Controls Division 21000 Brookpark Road, M/S 77-1, Cleveland OH 44135
J. Xu
Affiliation:
NASA Glenn Research Center, Instrumentation and Controls Division 21000 Brookpark Road, M/S 77-1, Cleveland OH 44135
D. Lukco
Affiliation:
QSS Group, Inc., Cleveland, OH 44135
A. Trunek
Affiliation:
OAI, Cleveland, OH 44135
M. Artale
Affiliation:
Akima Corporation, Fairview Park, OH 44126
P. Lampard
Affiliation:
Akima Corporation, Fairview Park, OH 44126
D. Androjna
Affiliation:
Akima Corporation, Fairview Park, OH 44126
D. Makel
Affiliation:
Makel Engineering, Chico, CA 95973
B. Ward
Affiliation:
Makel Engineering, Chico, CA 95973
C. C. Liu
Affiliation:
Case Western Reserve University, Cleveland, OH 44106
Get access

Abstract

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace applications including leak detection, environmental control, emission monitoring, and fire detection. While each of these applications require that the sensor and associated packaging be tailored for that individual application, they all require sensitive detection. The sensing approach taken to meet these needs is the use of SiC as a semiconductor in a Schottky diode configuration due to the demonstrated high sensitivity of Schottky diode-based sensors. However, Schottky diode structures require good control of the interface between the gas sensitive metal and SiC in order to meet required levels of sensitivity and stability. Two examples of effort to better control the SiC gas sensitive Schottky diode interface will be discussed. First, the use of chrome carbide as a barrier layer between the metal and SiC is discussed. Second, we report the first use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor deposition. An example of the demonstration of a SiC gas sensor in an aerospace applications is given. It is concluded that, while significant progress has been made, the development of SiC gas sensor systems is still at a relatively early level of maturity for a number of applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J4.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Neudeck, P.G., The VLSI Handbook, CRC Press LLC, ed. Chen, Wai-Kai, Ch. 6 (1999).Google Scholar
2. Spetz, A. L., Baranzahi, A., Tobias, P., and Lundstrom, I., Phys. Status Solidi A, 162, 493, (1997).Google Scholar
3. Spetz, A. L., Tobias, P., Uneus, L., Svenningstorp, H., Ekedahl, L., and Lundstrom, I., Sensors and Actuators B, 70, 67, (2000).Google Scholar
4. Chen, L. Y., Hunter, G. W., Neudeck, P. G., Knight, D. L., Liu, C. C., and Wu, Q. H., Proceeding of the Third International Symposium on Ceramic Sensors, Anderson, H. U., Liu, M., and Yamazoe, N., Editors, Electrochemical Society Inc., 92, (1996).Google Scholar
5. Hunter, G. W., Neudeck, P. G., Chen, L. Y., Knight, D., Liu, C. C., and Wu, Q. H., Silicon Carbide, III-Nitrides and Related Materials, Proceedings of International Conference on SiC and Related Materials, Stockholm, Sweden, Sep., 1997, G. Pensl, H. Morkoç, B. Monemar and E. Janzén Eds., 1093, (1998).Google Scholar
6. Hunter, G. W., Neudeck, P. G., Gray, M., Androjna, D., Chen, L.Y., Hoffman, R. W. Jr., Liu, C. C. and Wu, Q. H., Silicon Carbide and Related Materials – 1999, Proceedings International Conference on Silicon Carbide and Related Materials, 10-15 Oct., 1999, Research Triangle Park, MD, Carter, Calvin H. Jr., Devaty, Robert P., and Rohrer, Gregory S. Eds., 1439, (1999).Google Scholar
7. Hunter, G. W., Neudeck, P., Okojie, R., Thomas, V., Chen, L., Liu, C. C., Ward, B., and Makel, D., in Proceeding of the State-of-the-Art Program on Compound Semiconductors XXXVI/Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III, 201st Meeting of The Electrochemical Society, Philadelphia, Pennsylvania, May, 2002, edited by F. Ren, E. B.Stokes, S. J., PeartonJ. Han, A. G.Baca, H. M.Ng, J. I.Chyi, T. D.Moustakas, R. F.Kopf, P. C.Chang, M.Kuzahara, and J. P.Vilcot, pp. 93-111.Google Scholar
8. Hunter, G. W., Liu, C.C., Makel, D., 2001, MEMS Handbook, CRC Press LLC, ed. Gadel-Hak, M., Ch. 22.Google Scholar
9. Sze, S. M., Physics of Semiconductor Devices, 2nd Edition ed. New York: John Wiley & Sons (1981).Google Scholar
10. Lundstrom, I., Armgarth, M., L., and , Petersson, CRC Critical Reviews in Solid State and Materials Sciences, 15, 201, (1989).Google Scholar
11. Baranzahi, A., Spetz, A. L., Glavmo, M., Nytomt, J., and Lundstrom, I. in Proceedings, 8th International Conference on Solid-state Sensors and Actuators, and Eurosensors IX, Stockholm Sweden, 741, (1995).Google Scholar
12. Hunter, G. W., Neudeck, P. G., Chen, L. Y., Knight, D., Liu, C. C., and Wu, Q. H., AIAA paper 95-2647, (1995).Google Scholar
13. Powell, J. A. and Larkin, D., J. Physica Status Solidi (b), 202, 529, (1997).Google Scholar
14. Powell, J., Neudeck, P., Trunek, A., Beheim, G., Matus, L., Hoffman, J. R., and Keys, L., Applied Physics Letters, 77, 1449, 2000.Google Scholar
15. Neudeck, P. G., Powell, J. A., Beheim, G. M., Benavage, E. L., Abel, P. B., Trunek, A. J., Spry, D. J., Dudley, M., and Vetter, W. M., “Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web Growth of Thin SiC Cantilevers,” Journal of Applied Physics, 92, 5, pp. 2391–2400, (2002).Google Scholar
16. Chen, L., Hunter, G.W., and Neudeck, P. G., Solid-State Electronics, 42, 12, (1998).Google Scholar