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Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

  • Yitao Liao (a1), Christos Thomidis (a2), Anirban Bhattacharyya (a3), Chen-kai Kao (a4), Adam Moldawer (a5), Wei Zhang (a6) and Theodore D. Moustakas (a7)...

Abstract

In this paper, we report the development of AlGaN-based deep ultraviolet LEDs by rf plasma-assisted molecular beam epitaxy (MBE) emitting between 277 and 300 nm. Some of these devices were evaluated after fabrication at bare-die and some at wafer-level configurations. Devices with total optical output of 1.3 mW at injection current of 200 mA were produced, with maximum external quantum efficiency (EQE) of 0.16%. These performance values are equivalent to those reported for deep UV-LEDs grown by the Metalorganic chemical vapor deposition (MOCVD) method and measured at bare-die configuration. In parallel, we have evaluated the internal quantum efficiency (IQE) of AlGaN quantum wells, and found that such wells emitting at 250 nm have an IQE of 50%. From the analysis of these data, we concluded that the efficiency of deep UV LEDs is not limited by the IQE but by the light extraction efficiency, injection efficiency or a combination of both.

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Keywords

Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

  • Yitao Liao (a1), Christos Thomidis (a2), Anirban Bhattacharyya (a3), Chen-kai Kao (a4), Adam Moldawer (a5), Wei Zhang (a6) and Theodore D. Moustakas (a7)...

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