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Development of Electrochemical Copper Deposition Screening Methodologies for Next Generation Additive Selection

  • Kevin Ryan (a1), Kathleen Dunn (a1) and Jobert van Eisden (a2)

Abstract

To reduce time-to-knowledge and costs associated with wafer scale processing a laboratory scale copper electrochemical deposition (ECD) system was developed for screening new organic additives which promote bottom-up fill in interconnect trenches and vias. This new setup enables working process conditions and functionality trends to be identified for open source and proprietary suppressors and levelers at leading edge feature sizes (sub 50nm). The laboratory results can then be compared to the in-line wafer scale plating tool results to ensure their compatibility. A reliable laboratory setup that can mimic the dynamic conditions found inside the wafer scale plating tool will enable the main objective of this work to be efficiently realized. The main objective is to test two previously published models describing copper fill inside the trenches by bridging the gap between fundamental electrochemical measurements and wafer scale plating results. To date this work will focus on the reliability and transferability of plating results between the laboratory setup and a wafer scale plating tool and present preliminary data using gap fill and bottom-up growth ratio as performance metrics.

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References

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Keywords

Development of Electrochemical Copper Deposition Screening Methodologies for Next Generation Additive Selection

  • Kevin Ryan (a1), Kathleen Dunn (a1) and Jobert van Eisden (a2)

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