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Development of Anisotropic GaAs (001) Surface Morphology During Molecular Beam Epitaxial Growth

Published online by Cambridge University Press:  15 February 2011

Allan J. Pidduck ,
G.W. Smith ,
A.M. Keir  and
C.R. Whitehouse
Allan J. Pidduck
Affiliation:
Defence Research Agency, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
G.W. Smith
Affiliation:
Defence Research Agency, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
A.M. Keir
Affiliation:
Defence Research Agency, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
C.R. Whitehouse
Affiliation:
Department of Electrical and Electronic Engineering, Sheffield University, Sheffield, UK.
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Abstract

We have studied the development of a microscopically ridged [110] Morphology during (001) GaAs Molecular beam epitaxy, as a function of layer thickness and growth temperature. The ridge slopes are consistent with the [110] separation required to incorporate a majority of adatoms by step-flow growth. Thus step-flow can be a dominant growth mode even on nominally on-axis (singular) substrates. With increasing epilayer thickness, the ridge slopes, and surface step density, remain approximately constant, while the ridge spacings, and therefore roughness amplitude, increase steadily.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 53
Copyright
Copyright © Materials Research Society 1994

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