Skip to main content Accessibility help
×
Home

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

  • Cheng-Ying Huang (a1), Jeremy J. M. Law (a1), Hong Lu (a2), Mark J. W. Rodwell (a1) and Arthur C. Gossard (a1) (a2)...

Abstract

We investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

Copyright

References

Hide All
1. Vurgaftman, I., Meyer, J. R., and Ram-Mohan, L. R., J. Appl. Phys. 89, 5815 (2001).
2. Ted Masselink, W., Appl. Phys. Lett. 67, 801 (1995).
3. Nakata, Y., Sugiyama, Y., Inata, T., Ueda, O., Sasa, S., Muto, S., and Fujii, T., Mater. Res. Soc. Symp. Proc. 198, 289 (1990).
4. Georgiev, N., and Mozume, T., J. Appl. Phys. 89, 1064 (2001).
5. Kobayashi, K., Kamata, N., and Suzuki, T., Mater. Res. Soc. Symp. Proc. 56, 61 (1986).
6. Bennett, B. R., Moore, W. J., Yang, M. J., and Shanabrook, B. V., J. Appl. Phys. 87, 7876 (2000).
7. Bolognesi, C. R., Bryce, J. E., and Chow, D. H., Appl. Phys. Lett. 69, 3531 (1996).
8. Bennett, B. R., Yang, M. J., Shanabrook, B. V., Boos, J. B., and Park, D., Appl. Phys. Lett. 72, 1193 (1998).
9. Arora, V. K., and Naeem, A., Phys. Rev. B 31, 3887 (1985).
10. Price, P. J., Ann. Phys. 133, 217 (1981).
11. Ridley, B. K., J. Phys. C 15, 5899 (1982).
12. Gold, A., Phys. Rev. B 35, 723 (1987).
13. Chattopadyay, D., Phys. Rev. B 31, 1145 (1985).
14. Ikarashi, N., Tanaka, M., Sakaki, H., and Ishida, K., Appl. Phys. Lett. 60, 1360 (1992).
15. Petroff, P. M., Miller, R. C., Gossard, A. C., and Wiegmann, W., Appl. Phys. Lett. 44, 217 (1984).
16. Bolognesi, C. R., Kroemer, H., and English, J. H., Appl. Phys. Lett. 61, 213 (1992).

Keywords

Related content

Powered by UNSILO

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

  • Cheng-Ying Huang (a1), Jeremy J. M. Law (a1), Hong Lu (a2), Mark J. W. Rodwell (a1) and Arthur C. Gossard (a1) (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.