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Development of a high-growth rate 3C-SiC on Si CVD process

Published online by Cambridge University Press:  01 February 2011

M. Reyes ,
Y. Shishkin ,
S. Harvey  and
S. E. Saddow
Y. Shishkin
Affiliation:
shishkin@eng.usf.edu, University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
S. Harvey
Affiliation:
sharvey4@eng.usf.edu, University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
S. E. Saddow
Affiliation:
saddow@ieee.org, University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
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Abstract

Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

Keywords

crystal growthmorphologychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B08-01
Copyright
Copyright © Materials Research Society 2006

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