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Development and Characterization of a Cvd System for Thin-Film Solar Cell Manufacturing

  • F. R. Faller (a1), A. Hurrle (a2) and N. Schillinger (a2)

Abstract

With the development of crystalline-silicon thin-film solar cells (c-SiTFC) CVD has gained importance in a new field of application. In recent years research resulted in a large variety of different concepts of c-SiTFCs. Many of these concepts require the deposition of a silicon film of good quality. i.e., at high temperature. However, little effort has been made up to this point to develop a suitable apparatus for that purpose, especially for the case of mass production of such cells. In this paper we present a self-constructed CVD system that we believe has the potential to meet the goals of an economical production of c-SiTFCs. An extension of the existing apparatus into a system in which the substrates enter the reactor at one side and leave it at the other side in a continuous way is feasable.

The present system is characterized according to its behavior when typical CVD parameters are changed, the silicon conversion yield was investigated, and solar cells with a maximum efficiency of 15.3% were fabricated from epitaxial layers deposited on various substrates

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References

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«1» Bellavance, David and Anderson, Roger N.. ECS Spring Meeting, San Francisco, 1983.
«2» Walk, H. (AST Elektronik). German patent. DE 4,012,615, 1991.
«3» Faller, F. R., Schillinger, N., Hurrle, A., and Schetter, C.. 14th PVSEC, p.784, 1997.
«4» Habuka, H., Nagoya, T., Mayusumi, M., Katayama, M., Shimada, M., and Okuyama, K.. J. Cryst. Growth 169, page 61, 1996.
«5» Sarma, Kalluri R. and Rice, M. John. J. Cryst. Growth 56, page 313, 1982.

Development and Characterization of a Cvd System for Thin-Film Solar Cell Manufacturing

  • F. R. Faller (a1), A. Hurrle (a2) and N. Schillinger (a2)

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