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Determination of the Density of States on N-type Ptcdi-c13 Organic Thin-film Semiconductor

  • J. Puigdollers (a1) (a2), A. Marsal (a1), S. Galindo (a1), P. Carreras (a3), C. Voz (a1), J. Bertomeu (a3) and R. Alcubilla (a1) (a2)...

Abstract

In this paper we study the density of states in n-type N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide organic semiconductor using two different methods. The first one is based on the temperature dependence of the channel conductance in field-effect transistors. The second one is based on the subgap optical absorption coefficient measured using the Photothermal Deflection Spectroscopy technique. Both techniques allow estimating the distribution of localized states in the band gap of the semiconductor.

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